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| Indexado |
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| DOI | 10.1016/J.CERAMINT.2025.02.402 | ||
| Año | 2025 | ||
| Tipo |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
Rapid urban expansion and industrial advancement have led to severe environmental pollution, particularly in water bodies contaminated with toxic dyes and harmful pathogens. Zinc oxide (ZnO) nanoparticles have been extensively researched for their photocatalytic and antibacterial properties. However, their efficiency is limited by rapid electron-hole recombination and poor light absorption. In this study, ZnO nanoparticles doped with zirconium (Zr) were synthesized to overcome these limitations. Structural, morphological, and optical analyses, including XRD, FT-IR, FT-Raman, PL, UV-DRS, XPS, FE-SEM, HR-TEM, and EDS confirmed the successful incorporation of Zr into ZnO lattice. This incorporation effectively reduced the band gap from 3.11 eV to 3.05 eV. This modification enhanced both light absorption and charge separation. Photocatalytic degradation tests using the azo dye such as Reactive Red 120 under UV-A and sunlight exposure demonstrated that 3 wt% Zr-doped ZnO achieved nearly 100 % degradation efficiency under both light sources. The intermediates were analysed by GC-MS analysis, and a suitable degradation pathway is proposed. Additionally, antibacterial assays towards Pseudomonas aeruginosa, Bacillus subtilis, Staphylococcus aureus and Escherichia coli showed a significant increase in bacterial inhibition with Zr-doped ZnO. These results indicate that Zr-doped ZnO nanoparticles are interesting candidates for environmental applications such as wastewater treatment and antimicrobial surface coatings.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Mariyappillai, V. | - |
Annamalai University - India
|
| 2 | Shiyamala, C. | - |
Annamalai University - India
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| 3 | Abisheik, T. | - |
Nehru Memorial College, Puthanampatti - India
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| 4 | Tiffany, M. | - |
Nehru Memorial College, Puthanampatti - India
|
| 5 | Pandiyan, V. | - |
Nehru Memorial College, Puthanampatti - India
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| 6 | Senthilraja, Adhimoolam | - |
Thiruvalluvar University - India
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| 7 | Afzal, Mohd | - |
College of Sciences - Arabia Saudí
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| 8 | Barmavatu, Praveen | - |
Universidad Tecnológica Metropolitana - Chile
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| 9 | Shanmugaraj, Krishnamoorthy | - |
Universidad de Tarapacá - Chile
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| 10 | Balu, Krishnakumar | - |
Saveetha School of Engineering - India
Yeungnam University - Corea del Sur Universidad de Sevilla - España |
| Agradecimiento |
|---|
| The Transmission electron microscopy and HR-TEM investigation of the 3 wt% Zr-doped ZnO photocatalyst, shown in Fig. 7a\u2013c and Fig. S1 (see Supporting information), is further supported by FFT (Fig. 7d, e, g, and h) and IFFT images (Fig. 7e and h, inset). The TEM images, taken from multiple regions and under different magnifications, reveal a composite structure with hexagonal and occasionally spherical particles (Fig. S1). Clear lattice fringes observed in Fig. 7f and i confirm the presence of ZnO crystalline grains. The IFFT results closely align with the FFT patterns, highlighting the detailed lattice structure depicted in the lattice fringes of Fig. 7f and i. Specifically, the d-spacing of 0.266 nm corresponds to the (002) plane of wurtzite ZnO, while a d-spacing of 0.292 nm matches the (100) plane. The reported d-spacing for the (100) plane generally falls within the range of 0.281\u20130.293 nm, with variations attributed to minor lattice distortions or measurement uncertainties. The term distortion is used in the context of crystal structures when the incorporation of a dopant (like Zr4+) induces slight changes in the lattice parameters. While the observed d-spacing (0.292 nm) is within the typical range, it is on the upper limit of that range. This subtle shift toward the higher end is likely caused by the larger ionic radius of Zr4+ (0.72 \u00C5) compared to Zn2+ (0.60 \u00C5). When Zr4+ replaces Zn2+ in the lattice, it introduces strain due to this size difference, causing a slight expansion of the lattice. The doping of Zr into the ZnO matrix introduces strain or expansion in the crystal lattice, subtly altering the d-spacing. The observed value of 0.292 nm likely reflects a distortion in the (100) plane induced by Zr doping. This can be explained by the larger ionic radius of Zr4+ compared to Zn2+, which exerts strain on the lattice and results in an increased interplanar spacing.Dr. Mohd Afzal extends his appreciation to Researchers Supporting Project number (RSPD2025R979), King Saud University, Riyadh, Saudi Arabia, for financial assistance. |
| The Transmission electron microscopy and HR-TEM investigation of the 3 wt% Zr-doped ZnO photocatalyst, shown in Fig. 7a\u2013c and Fig. S1 (see Supporting information), is further supported by FFT (Fig. 7d, e, g, and h) and IFFT images (Fig. 7e and h, inset). The TEM images, taken from multiple regions and under different magnifications, reveal a composite structure with hexagonal and occasionally spherical particles (Fig. S1). Clear lattice fringes observed in Fig. 7f and i confirm the presence of ZnO crystalline grains. The IFFT results closely align with the FFT patterns, highlighting the detailed lattice structure depicted in the lattice fringes of Fig. 7f and i. Specifically, the d-spacing of 0.266 nm corresponds to the (002) plane of wurtzite ZnO, while a d-spacing of 0.292 nm matches the (100) plane. The reported d-spacing for the (100) plane generally falls within the range of 0.281\u20130.293 nm, with variations attributed to minor lattice distortions or measurement uncertainties. The term distortion is used in the context of crystal structures when the incorporation of a dopant (like Zr4+) induces slight changes in the lattice parameters. While the observed d-spacing (0.292 nm) is within the typical range, it is on the upper limit of that range. This subtle shift toward the higher end is likely caused by the larger ionic radius of Zr4+ (0.72 \u00C5) compared to Zn2+ (0.60 \u00C5). When Zr4+ replaces Zn2+ in the lattice, it introduces strain due to this size difference, causing a slight expansion of the lattice. The doping of Zr into the ZnO matrix introduces strain or expansion in the crystal lattice, subtly altering the d-spacing. The observed value of 0.292 nm likely reflects a distortion in the (100) plane induced by Zr doping. This can be explained by the larger ionic radius of Zr4+ compared to Zn2+, which exerts strain on the lattice and results in an increased interplanar spacing.Dr. Mohd Afzal extends his appreciation to Researchers Supporting Project number (RSPD2025R979), King Saud University, Riyadh, Saudi Arabia, for financial assistance. |