This work addresses the problem of semiconductor losses in three-phase VSI using Finite Control Set - Model Predictive Control (FCS-MPC). Modifications to the FCS-MPC are proposed to reduce the switching frequency and improve efficiency, and these are tested through simulations. Issues such as switching frequency variability and harmonic distortion are addressed. The proposed solutions, such as delay compensation and cost function optimization, demonstrate notable reductions in the Total Harmonic Distortion (THD) and the average switching frequency, managing to find a switching reduction of up to 45% in the latter. The research also includes a detailed comparison between SiC-Mosfet and Si-IGBT, highlighting the advantages of the former in efficiency and static and dynamic properties. Despite certain limitations in the SiC-Mosfet, the results show its superiority in high-frequency and high-temperature applications, obtained through a simulation and comparison that considers different aspects, from the switching frequency to the useful life and the packaging.