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| DOI | 10.1016/J.PHYSA.2024.130165 | ||||
| Año | 2024 | ||||
| Tipo | artículo de investigación |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
Mono- and multi-fractal geometry have been used to explore the surface characteristics of scanning electron microscopy (SEM) micrographs of the SnS films with thicknesses of 100 nm (SnS1) to 600 nm (SnS4), respectively. For this investigation, the SnS thin films have been grown on fluorine-doped tin oxide (FTO)-coated glass substrate through the thermal evaporation route, and surface morphologies are captured by SEM. Two-dimensional multi-fractal detrended fluctuation analysis (MFDFA) based on the partition function is used to examine whether the surfaces have a multi-fractal nature or not. The partition function is applied to extract the generalized Hurst exponent from the segment size. It has been found that surfaces with higher surface roughness induce substantial nonlinearity and a wider width of the multi-fractal spectrum. The multi-fractal spectrum acquired from the analysis of the geometry and shape of the singularity spectrum is used to quantify the irregularity and complexity of surfaces. Minkowski functionals (MFs) parameters such as volume, boundary, and connectivity were measured for each thin film. Moreover, we tried to correlate the electrical conductivity with the mono- and multi-fractal parameters such as fractal dimension (Df), singularity strength function (Delta alpha), singularity spectrum Delta f(alpha), and it is observed that the conductivity of a thin film decreases with decreasing fractal dimension. The minimum (maximum) resistivity (conductivity) was observed for the surface having a larger fractal dimension. The present investigation suggests that such SnS surfaces, having minimal resistivity and maximum conductivity on the roughest surface, indicate enhanced light trapping capacity and can be utilized as active layers for advanced optoelectronics devices.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Vinita | - |
Banaras Hindu Univ BHU - India
Banaras Hindu University - India |
| 2 | Kumar, Chandra | - |
Universidad Mayor - Chile
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| 3 | Yadav, R. P. | - |
Govt PG Coll - India
Mahamaya Govt Degree Coll Manjhanpur - India DDU Govt. P.G. College - India Mahamaya Government Degree College Manjhanpur - India |
| 4 | Singh, B. K. | - |
Banaras Hindu Univ BHU - India
PDPM Indian Inst Informat Technol Design & Mfg - India Banaras Hindu University - India Pandit Dwarka Prasad Mishra Indian Institute of Information Technology, Design & Manufacturing Jabalpur - India |
| Fuente |
|---|
| University Grants Commission |
| Banaras Hindu University |
| University Grant Commission (UGC) India |
| Institution of Eminence (IoE) BHU, Govt. of India |
| Institution of Eminence |
| Agradecimiento |
|---|
| BKS acknowledges financial support from the Institution of Eminence (IoE) BHU grant number-6031, Govt. of India. Vinita acknowledges financial support as Senior Research Fellowship (Ref. No.- 1470/CSIR-UGC NET JUNE 2019) from University Grant Commission (UGC) India. |
| BKS acknowledges financial support from the Institution of Eminence (IoE) BHU grant number-6031, Govt. of India. Vinita acknowledges financial support as Senior Research Fellowship (Ref. No.- 1470/CSIR-UGC NET JUNE 2019) from University Grant Commission (UGC) India. |