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Effects of Pt doping on surface properties and quenching of band edge emission in ZnO
Indexado
WoS WOS:001344583500001
Scopus SCOPUS_ID:85207082688
DOI 10.1016/J.MTCHEM.2024.102371
Año 2024
Tipo artículo de investigación

Citas Totales

Autores Afiliación Chile

Instituciones Chile

% Participación
Internacional

Autores
Afiliación Extranjera

Instituciones
Extranjeras


Abstract



Pt doped ZnO thin films were synthesized on soda-lime glass substrates using a cost-effective sol-gel method, followed by spin coating and thermal annealing at various temperatures. Several characterization techniques such as UV-Vis absorption spectroscopy, photoluminescence (PL), field emission scanning electron microscopy (FESEM), time-of-flight secondary ion mass spectroscopy (ToF-SIMS), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) are exploited to investigate the Pt doping effects on surface and optical properties of ZnO thin films. UV-Vis analysis demonstrated a slight decrease in the optical band gap from 3.3 eV to 3.2 eV with increased annealing, indicating enhanced suitability for optoelectronic applications. FESEM imaging revealed distinct worm-like structures and small Pt metal nanoparticles in unannealed samples, while thermal treatment supported the formation of spherical Pt nanoparticles and improved conductive pathways in the films. The Wagner diagram, coupled with Auger line transitions from XPS, quantified the oxidation states and chemical environments of Zn and Pt, respectively. Notably, the observed changes in the binding energy of the Zn-2p junction and the kinetic energy of the Zn-LMM Auger junction were significantly influenced by the Pt doping and the electronic properties of the substrate. The Wagner diagram provided a comprehensive visual representation of the parameters, facilitating a deeper understanding of electronic interactions and structural dynamics at the atomic level. XPS results confirmed the presence of ZnO, Zn(OH)(2), Pt-0 and PtO2 phases, indicating stability and constutient's interactions. ToF-SIMS also validated the uniform distribution of Pt nanoparticles within the ZnO thin film, confirming the effectiveness of the sol-gel method. As a result of Pt doping, PL studies revealed a large quenching effect on band edge emission in the UV and visible emission region of ZnO thin film, which is due to Pt acting as a recombination center for photogenerated carriers. Overall, our results highlight the influence of annealing and Pt incorporation on the optical and structural properties of ZnO thin films and highlight their potential applications for photonics and catalysis.

Revista



Revista ISSN
Materials Today Chemistry 2468-5194

Métricas Externas



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Disciplinas de Investigación



WOS
Chemistry, Multidisciplinary
Materials Science, Multidisciplinary
Scopus
Materials Chemistry
Catalysis
Electronic, Optical And Magnetic Materials
Biomaterials
Polymers And Plastics
Colloid And Surface Chemistry
SciELO
Sin Disciplinas

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Publicaciones WoS (Ediciones: ISSHP, ISTP, AHCI, SSCI, SCI), Scopus, SciELO Chile.

Colaboración Institucional



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Autores - Afiliación



Ord. Autor Género Institución - País
1 Kumar, Promod - Univ Free State - República de Sudáfrica
Univ Jean Monnet St Etienne - Francia
University of the Free State - República de Sudáfrica
Laboratoire Hubert Curien UMR CNRS 5516 - Francia
2 Mathpal, Mohan Chandra - Pontificia Universidad Católica de Chile - Chile
3 Goutaland, F. - Univ Jean Monnet St Etienne - Francia
Laboratoire Hubert Curien UMR CNRS 5516 - Francia
4 HEVIA-ZAMORA, SAMUEL ALEJANDRO Hombre Pontificia Universidad Católica de Chile - Chile
5 Duvenhage, M. M. - Univ Free State - República de Sudáfrica
University of the Free State - República de Sudáfrica
6 Roos, W. D. - Univ Free State - República de Sudáfrica
University of the Free State - República de Sudáfrica
7 Swart, H. C. Hombre Univ Free State - República de Sudáfrica
University of the Free State - República de Sudáfrica

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Financiamiento



Fuente
Fondo Nacional de Desarrollo Científico y Tecnológico
FONDECYT program
Department of Science and Technology, Ministry of Science and Technology, India
University of the Free State
South Africa Research Chair Initiative of the Department of Science and Technology

Muestra la fuente de financiamiento declarada en la publicación.

Agradecimientos



Agradecimiento
We acknowledge the support provided by the South Africa Research Chair Initiative of the Department of Science and Technology (No. 84415) , and the financial support of the University of the Free State. Dr Mohan C. Mathpal greatly acknowledges the funding from FONDECYT program (N degrees 3190316) to support the research activity.
We acknowledge the support provided by the South Africa Research Chair Initiative of the Department of Science and Technology (No. 84415), and the financial support of the University of the Free State. Dr Mohan C. Mathpal greatly acknowledges the funding from FONDECYT program (N \u00B0 3190316) to support the research activity.

Muestra la fuente de financiamiento declarada en la publicación.