Dataciencia

Colección SciELO Chile

Exploring novel HTL suitable for Eco-friendly and high performance FASnI<sub>3</sub> photovoltaics

Indexado

WoS	WOS:000861655900004
Scopus	SCOPUS_ID:85135383389

DOI

10.1016/J.MSEB.2022.115909

Año

2022

Tipo

artículo de investigación

Citas Totales

Autores Afiliación Chile

Instituciones Chile

% Participación
Internacional

Autores
Afiliación Extranjera

Instituciones
Extranjeras

Abstract

Hybrid perovskite FAPbI(3) is highly suitable candidate for photovoltaics. The major concerns are dissolution and hazardous nature of 'Pb', which results in the major environmental pollution. Toxicity can be overcome by replacing 'Pb' with 'Sn' which is a highly suitable alternative in place of 'Pb'. Among the non-hazardous perovskites, FASnI(3) exhibits highest reported efficiency of similar to 14.6%. To achieve eco-friendly, high efficiency FASnI(3) PV, issues associated with it needs to be addressed. Primary issue is conversion of 'Sn2+' state to 'Sn4+'. To address this issues 'Sn' oxidation need to suppress. Introducing stable and high conducting HTL over FASnI(3) can control oxidation of 'Sn'. In this work, various novels HTLs were investigated by substituting PEDOT:PSS in FTO/C-60/FASnI(3)/HTL/Au device. Among all HTLs, CuSbS2 showed highest efficiency (16.05%). PV simulation results and their analysis of all devices are reported in this work.

Revista

Revista	ISSN
Materials Science And Engineering B Advanced Functional Solid State Materials	0921-5107

Métricas Externas

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Disciplinas de Investigación

WOS
Physics, Condensed Matter
Materials Science, Multidisciplinary

Scopus
Materials Science (All)
Mechanics Of Materials
Mechanical Engineering
Condensed Matter Physics

SciELO
Sin Disciplinas

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Publicaciones WoS (Ediciones: ISSHP, ISTP, AHCI, SSCI, SCI), Scopus, SciELO Chile.

Colaboración Institucional

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Autores - Afiliación

Ord.	Autor	Género	Institución - País
1	Azhakanantham, Dheebanathan	-	SRM Inst Sci & Technol - India SRM Institute of Science and Technology - India
2	Selvamani, Muthamizh	-	Universidad de Concepción - Chile
3	Kim, Tae Geun	Hombre	Sch Elect Engn - Corea del Sur School of Electrical Engineering - Corea del Sur
3	Geun Kim, Tae	-	School of Electrical Engineering - Corea del Sur Sch Elect Engn - Corea del Sur
4	CONTRERAS-GUAJARDO, DANTE IVANOV	Hombre	Universidad de Concepción - Chile
5	Kesavan, Arul Varman	Hombre	SRM Inst Sci & Technol - India SRM Institute of Science and Technology - India
5	Varman Kesavan, Arul	Hombre	SRM Institute of Science and Technology - India

Muestra la afiliación y género (detectado) para los co-autores de la publicación.

Financiamiento

Fuente
Universiteit Gent
Science and Engineering Research Board
SRM Institute of Science and Technology
Science and Engineering Research Board, New Delhi, India

Muestra la fuente de financiamiento declarada en la publicación.

Agradecimientos

Agradecimiento
This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS) , University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure.
This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS), University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure.

Agradecimiento

This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS) , University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure.

This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS), University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure.