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Studying V<sub>OC</sub> in lead free inorganic perovskite photovoltaics by tuning energy bandgap and defect density
| Indexado |
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| DOI | 10.1016/J.CERAMINT.2022.06.125 | ||||
| Año | 2022 | ||||
| Tipo | artículo de investigación |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
Abstract
In hybrid perovskite photovoltaics (hPPV) highest reported efficiency is ∼25.2%. However, stability and toxicity are major concern towards commercialization. To improve stability, various approaches were made by research communities. Utilizing inorganic perovskite photoactive materials is one such approach to improve stability. Toxic element ‘Pb’ can be substituted with suitable non-toxic elements such as ‘Sn’ without sacrificing efficiency and stability. In CsPbI3, replacing Sn in place of Pb results in the PCE of ∼13%. However, efficiency of this PV is lagging 12% as compared with hybrid perovskite PV. This difference should be overcome to compete with hPPV. To improve the efficiency of inorganic PPV various experimental strategies were adopted. In this study, SCAPS simulation was carried out on FTO/TiO2/CsSnI3/spiro-OMeTAD/Au by altering Eg, energetic position of conduction and valence band, defect density, and thickness of semiconductor. Obtained results were analyzed and reported in this work.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Elango, Indumathi | - |
SRM Institute of Science and Technology - India
SRM Inst Sci & Technol - India |
| 2 | Selvamani, Muthamizh | - |
Universidad de Concepción - Chile
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| 3 | Ramamurthy, Praveen C. | Hombre |
Indian Institute of Science - India
Indian Inst Sci - India |
| 4 | Kesavan, Arul Varman | Hombre |
SRM Institute of Science and Technology - India
SRM Inst Sci & Technol - India |
| Fuente |
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| Universiteit Gent |
| Science and Engineering Research Board |
| SRM Institute of Science and Technology |
| Science and Engineering Research Board, New Delhi, India |
| Agradecimiento |
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| This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690.This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS), University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure. |
| This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690.This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS), University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure. |
| This is supported by Science and Engineering Research Board, New Delhi, India. The grant number is SRG/2021/001690. The authors would like to thank, Mr. Marc Burgelman, Electronics and Information Systems (ELIS), University of Gent, Belgium, for providing SCAPS-1D software for the simulation studies. The authors would like to thank, SRM Institute of Science and Technology, Kattankulathur-603203, Tamil Nadu, India, for providing the required infrastructure. |
