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SiC-MOSFET or Si-IGBT: Comparison of Design and Key Characteristics of a 690 V Grid-Tied Industrial Two-Level Voltage Source Converter
Indexado
WoS WOS:000659824800001
Scopus SCOPUS_ID:85107434773
DOI 10.3390/EN14113054
Año 2021
Tipo artículo de investigación

Citas Totales

Autores Afiliación Chile

Instituciones Chile

% Participación
Internacional

Autores
Afiliación Extranjera

Instituciones
Extranjeras


Abstract



In this paper, a design driven comparison between two 190 kVA industrial three-phase two-level voltage source converter (2L-VSC) designs based in silicon carbide (SiC) and silicon (Si) for 690 V grids is presented. These two designs were conceived to have the same nominal power, while switching at reasonable switching speeds and requiring the same case to ambient thermal impedance. Under these conditions, the designs were studied to detect the potential gains and limitations that a pragmatic converter design could feature when using these two technologies regarding cost, efficiency, size and weight. To achieve this, experimentally determined semiconductor characteristics were used to perform simulations, the results of which were then used to design the essential parts of the converter. These designed parts were then corroborated with manufacturers, from which physical characteristics of all designed components were obtained. The results show that the SiC based design presents substantial weight savings and an 11% system cost reduction, while preserving its traditional characteristics such as improved overall efficiency when compared to the silicon based design under the given design requirements and constraints.

Revista



Revista ISSN
Energies 1996-1073

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Disciplinas de Investigación



WOS
Energy & Fuels
Scopus
Sin Disciplinas
SciELO
Sin Disciplinas

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Publicaciones WoS (Ediciones: ISSHP, ISTP, AHCI, SSCI, SCI), Scopus, SciELO Chile.

Colaboración Institucional



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Autores - Afiliación



Ord. Autor Género Institución - País
1 FUENTES-CASTRO, CARLOS DANIEL Hombre Universidad Técnica Federico Santa María - Chile
Tech Univ Dresden - Alemania
TECHNISCHE UNIVERSITAT DRESDEN - Alemania
2 Mueller, Marcus Hombre Tech Univ Dresden - Alemania
TECHNISCHE UNIVERSITAT DRESDEN - Alemania
2 Müller, Marcus Hombre TECHNISCHE UNIVERSITAT DRESDEN - Alemania
3 Bernet, Steffen Hombre Tech Univ Dresden - Alemania
TECHNISCHE UNIVERSITAT DRESDEN - Alemania
4 KOURO, SAMIR Hombre Universidad Técnica Federico Santa María - Chile

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Financiamiento



Fuente
CONICYT-PCHA
DAAD
Deutscher Akademischer Austauschdienst
AC3E
SERC
Technische Universität Dresden
DOCTORADO
ANID
Science and Engineering Research Council

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Agradecimientos



Agradecimiento
This work was supported in part by the ANID (CONICYT-PCHA/Doctorado Nacional/2015-21151279), in part by the DAAD, in part by the Technische Universitat Dresden, in part by AC3E (ANID/Basal/FB0008), and in part by SERC (ANID/FONDAP/15110019).
Acknowledgments: This work was supported in part by the ANID (CONICYT-PCHA/Doctorado Nacional/2015-21151279), in part by the DAAD, in part by the Technische Universität Dresden, in part by AC3E (ANID/Basal/FB0008), and in part by SERC (ANID/FONDAP/15110019).

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