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| DOI | 10.1039/C8CP04878A | ||||
| Año | 2018 | ||||
| Tipo | artículo de investigación |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
We propose a directional switching effect in a metallic device. To this end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be controlled by the Fermi energy and the magnetic field direction in the active device. Interestingly, unidirectional transport of charges and valleys is generated between two-terminals at the same bias voltage. Furthermore, we quantify the valley depolarization as a function of disorder concentration. Our results open a way for active graphene-based valleytronics devices.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Berdakin, Matias | Hombre |
Universidad de Chile - Chile
|
| 2 | Barrios-Vargas, J. E. | Hombre |
Universidad de Chile - Chile
|
| 3 | FOA-TORRES, LUIS EDUARDO FRANCISCO | Hombre |
Universidad de Chile - Chile
|
| Fuente |
|---|
| Fondo Nacional de Desarrollo Científico y Tecnológico |
| FONDECYT (Chile) |
| Fondo Nacional de Desarrollo CientÃfico y Tecnológico |