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| DOI | 10.4028/WWW.SCIENTIFIC.NET/AMM.110-116.5373 | ||
| Año | 2012 | ||
| Tipo |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
Low temperature radio frequency plasma is widely used in low temperature plasma processing medium for material processing in many fields including microelectronics, aerospace, and the biology. For proper utilization of the process, it is very much important to know the plasma parameters. In this paper a novel technique is used to determine the plasma parameters from the electrical discharge characteristic and the power balance method. The homogeneous discharge model is used to evaluate the relation between the plasma parameters with the discharge characteristics. The electron density and temperature is found to be well agree with the Langmuir probe data in the range of 0.5×1016 to 45×1016 cm-3 and 1.4 to 1.6 ev for wide range of rf power. © (2012) Trans Tech Publications, Switzerland.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Bora, Biswajit | Hombre |
Pontificia Universidad Católica de Chile - Chile
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| 2 | Bhuyan, Heman | - |
Pontificia Universidad Católica de Chile - Chile
|
| 3 | FAVRE-DOMINGUEZ, MARIO BENJAMIN | Hombre |
Pontificia Universidad Católica de Chile - Chile
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| 4 | WYNDHAM-HODDER, EDMUNDO SYDENHAM | Hombre |
Pontificia Universidad Católica de Chile - Chile
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| 5 | CHUAQUI-KETTLUN, HERNAN HUMBERTO | - |
Pontificia Universidad Católica de Chile - Chile
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