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| DOI | 10.1016/J.SURFCOAT.2010.07.104 | ||||
| Año | 2010 | ||||
| Tipo | artículo de investigación |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
In this work, a series of two-dimensional plane-strain finite element analyses was conducted to further understand the stress distribution during tensile tests on coated systems. Besides the film and the substrate, the finite element model also considered a number of cracks perpendicular to the film/substrate interface. Different from analyses commonly found in the literature, the mechanical behavior of both film and substrate was considered elastic-perfectly plastic in part of the analyses. Together with the film yield stress and the number of film cracks, other variables that were considered were crack tip geometry, the distance between two consecutive cracks and the presence of an interlayer. The analysis was based on the normal stresses parallel to the loading axis (sigma(xx)), which are responsible for cohesive failures that are observed in the film during this type of test. Results indicated that some configurations studied in this work have significantly reduced the value of sigma(xx) at the film/substrate interface and close to the pre-defined crack tips. Furthermore, in all the cases studied the values of sigma(xx) were systematically larger at the film/substrate interface than at the film surface. (C) 2010 Elsevier B.V. All rights reserved.
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | Fukumasu, N. K. | - |
UNIV SAO PAULO - Brasil
Universidade de Sao Paulo - USP - Brasil Universidade de São Paulo - Brasil |
| 2 | Angelo, C. M. | - |
UNIV SAO PAULO - Brasil
Universidade de Sao Paulo - USP - Brasil Universidade de São Paulo - Brasil |
| 3 | Ignat, Miguel | Hombre |
Universidad de Chile - Chile
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| 4 | Souza, R. M. | - |
UNIV SAO PAULO - Brasil
Universidade de Sao Paulo - USP - Brasil Universidade de São Paulo - Brasil |
| Fuente |
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| Conselho Nacional de Desenvolvimento Científico e Tecnológico |
| Conselho Nacional de Desenvolvimento CientÃfico e Tecnológico |