We report the Hall constant R(H), drift mobility mu(D), and Hall mobility mu(H) measured at 4 K in thin gold films deposited on mica substrates, where the dominant electron scattering mechanism is electron-surface scattering. R(H) increases with increasing film thickness and decreases with increasing magnetic field. For high magnetic fields B >= 6 T, R(H) turns out to be approximately independent of magnetic field, and its value is close to that of the free electron model. We use the high magnetic field values of R(H) to determine film thickness. This nondestructive method leads to a determination of film thickness that agrees to within 10% with the thickness measured by other techniques. The theoretical predictions, based upon the theory of Fuchs-Sondheimer and the theory of Calecki, are at variance with experimental observations. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3525704]