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An alternate theoretical approach to solid-state bonding
| Indexado |
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| DOI | 10.1016/J.SCRIPTAMAT.2010.10.044 | ||||
| Año | 2011 | ||||
| Tipo | artículo de investigación |
Citas Totales
Autores Afiliación Chile
Instituciones Chile
% Participación
Internacional
Autores
Afiliación Extranjera
Instituciones
Extranjeras
Abstract
A novel physical explanation for solid-state bonding is presented, which yields closed-form equations relating the bonding progression with time, temperature, applied pressure and the constants characterizing the material. Excellent agreement with experiment is attained, with no adjustable parameter. In the novel scheme, diffusion bonding is caused by the interpenetration of the two surfaces at the grain level. The process is driven by the strong tensile stress field induced in the plane of the interface by the plastic deformation. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
| WOS |
|---|
| Metallurgy & Metallurgical Engineering |
| Materials Science, Multidisciplinary |
| Nanoscience & Nanotechnology |
| Scopus |
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| Materials Science (All) |
| Mechanics Of Materials |
| Mechanical Engineering |
| Condensed Matter Physics |
| Metals And Alloys |
| SciELO |
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| Sin Disciplinas |
| Ord. | Autor | Género | Institución - País |
|---|---|---|---|
| 1 | LAGOS-INFANTE, MIGUEL ANGEL | Hombre |
Universidad de Talca - Chile
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| 2 | Retamal, Cesar | Hombre |
Universidad de Talca - Chile
Univ Paris Ouest Nanterre Def - Francia Université de Paris Ouest Nanterre la Défense - Francia Laboratoire de Thermique Interfaces et Environnement - Francia |
